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vishay siliconix SI4834CDY document number: 68790 s09-2109-rev. b, 12-oct-09 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet with schottky diode features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? notebook logic dc-to-dc ? low current dc-to-dc product summary v ds (v) r ds(on) ( ) i d (a) a, e q g (typ.) channel-1 30 0.020 at v gs = 10 v 8.0 7.3 0.025 at v gs = 4.5 v 8.0 channel-2 30 0.020 at v gs = 10 v 8.0 7.3 0.025 at v gs = 4.5 v 8.0 schottky product summary v ds (v) v sd (v) diode forward voltage i f (a) a 30 0.51 v at 1.0 a 2.0 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4834CDY-t1-e3 (lead (pb)-free) SI4834CDY-t1-ge3 (lead (pb)-free and halogen-free) n-channel mosfet d 1 g 1 s 1 schottky diode n-channel mosfet d 2 g 2 s 2 notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 110 c/w (channel-1) and 110 c/w (channel-2). e. package limited. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol channel-1 channel-2 unit drain-source voltage v ds 30 30 v gate-source voltage v gs 20 20 continuous drain current (t j = 150 c) t c = 25 c i d 8.0 e 8.0 e a t c = 70 c 7.1 7.1 t a = 25 c 7.5 b, c 7.5 b, c t a = 70 c 5.8 b, c 5.8 b, c pulsed drain current (10 s pulse width) i dm 30 30 source-drain current diode current t c = 25 c i s 2.6 2.6 t a = 25 c 1.8 b, c 1.8 b, c pulsed source-drain current i sm 30 30 single pulse avalanche current l = 0.1 mh i as 10 10 single pulse avalanche energy e as 55 mj maximum power dissipation t c = 25 c p d 2.9 2.9 w t c = 70 c 1.8 1.8 t a = 25 c 2 b, c 2 b, c t a = 70 c 1.2 b, c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, d t 10 s r thja 52 62.5 52 62.5 c/w maximum junction-to-foot (drain) steady state r thjf 35 43 35 43
www.vishay.com 2 document number: 68790 s09-2109-rev. b, 12-oct-09 vishay siliconix SI4834CDY notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 1 ma ch-1 30 v v gs = 0 v, i d = 1 ma ch-2 30 v ds temperature coefficient v ds /t j i d = 250 a ch-2 32 mv/c v gs(th) temperature coefficient v gs(th) /t j i d = 250 a ch-2 - 6 gate threshold voltage v gs(th) v ds = v gs , i d = 1 ma ch-1 1 3 v v ds = v gs , i d = 1 ma ch-2 1 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na v ds = 0 v, v gs = 20 v ch-2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 0.016 0.10 ma v ds = 30 v, v gs = 0 v ch-2 0.001 v ds = 30 v, v gs = 0 v, t j = 100 c ch-1 1.1 10 v ds = 30 v, v gs = 0 v, t j = 100 c ch-2 0.025 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v ch-1 20 a v ds = 5 v, v gs = 10 v ch-2 20 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 8 a ch-1 0.0156 0.020 v gs = 10 v, i d = 8 a ch-2 0.0156 0.020 v gs = 4.5 v, i d = 5 a ch-1 0.019 0.025 v gs = 4.5 v, i d = 5 a ch-2 0.019 0.025 forward transconductance b g fs v ds = 15 v, i d = 8 a ch-1 29 s v ds = 15 v, i d = 8 a ch-2 29 dynamic a input capacitance c iss channel-1 v ds = 15 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 15 v, v gs = 0 v, f = 1 mhz ch-1 950 pf ch-2 950 output capacitance c oss ch-1 185 ch-2 155 reverse transfer capacitance c rss ch-1 65 ch-2 65 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 8 a ch-1 16.5 25 nc v ds = 15 v, v gs = 10 v, i d = 8 a ch-2 16.5 25 channel-1 v ds = 15 v, v gs = 4.5 v, i d = 8 a channel-2 v ds = 15 v, v gs = 4.5 v, i d = 8 a ch-1 7.3 11 ch-2 7.3 11 gate-source charge q gs ch-1 2.7 ch-2 2.7 gate-drain charge q gd ch-1 2.1 ch-2 2.1 gate resistance r g f = 1 mhz ch-1 0.2 1.2 2.4 ch-2 0.2 1.2 2.4
document number: 68790 s09-2109-rev. b, 12-oct-09 www.vishay.com 3 vishay siliconix SI4834CDY notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 10 v, r g = 1 channel-2 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 10 v, r g = 1 ch-1 10 20 ns ch-2 9 18 rise time t r ch-1 10 20 ch-2 11 20 turn-off delay time t d(off) ch-1 18 35 ch-2 18 35 fall time t f ch-1 9 18 ch-2 8 16 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 4.5 v, r g = 1 channel-2 v dd = 15 v, r l = 3 i d ? 5 a, v gen = 4.5 v, r g = 1 ch-1 17 35 ch-2 17 35 rise time t r ch-1 12 24 ch-2 12 24 turn-off delay time t d(off) ch-1 19 35 ch-2 18 35 fall time t f ch-1 10 20 ch-2 10 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 2.6 a ch-2 2.6 pulse diode forward current a i sm ch-1 30 ch-2 30 body diode voltage v sd i s = 1 a ch-1 0.46 0.51 v i s = 1 a ch-2 0.74 1.1 body diode reverse recovery time t rr channel-1 i f = 5 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 5 a, di/dt = 100 a/s, t j = 25 c ch-1 17 34 ns ch-2 17 34 body diode reverse recovery charge q rr ch-1 7 14 nc ch-2 9 18 reverse recovery fall time t a ch-1 9 ns ch-2 10 reverse recovery rise time t b ch-1 8 ch-2 7
www.vishay.com 4 document number: 68790 s09-2109-rev. b, 12-oct-09 vishay siliconix SI4834CDY channel-1 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10 v thr u 4 v v gs =3 v 0.014 0.016 0.01 8 0.020 0.022 0.024 0 6 12 1 8 24 30 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v v gs =4.5 v 0 2 4 6 8 10 0.0 3.6 7.2 10. 8 14.4 1 8 .0 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =20 v v ds =10 v i d = 8 a v ds =15 v transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 012345 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c 0 240 4 8 0 720 960 1200 0 5 10 15 20 25 30 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss c rss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs =10 v v gs =4.5 v i d = 8 a
document number: 68790 s09-2109-rev. b, 12-oct-09 www.vishay.com 5 vishay siliconix SI4834CDY channel-1 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage reverse current (schottky) 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c 0255075100125150 10 -2 t j -j u nction temperat u re (c) - re v erse c u rrent (a) i r 10 -4 10 -3 10 -5 10 -6 30 v 10 v 20 v on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 0.10 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d = 8 a 0 12 24 36 4 8 60 0 1 1 1 0 0 . 00.01 time (s) po w er ( w ) 0.1 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * 1s dc 10 s b v dss limited
www.vishay.com 6 document number: 68790 s09-2109-rev. b, 12-oct-09 vishay siliconix SI4834CDY channel-1 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 10 0 255075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power derating, junction-to-foot 0.0 0.7 1.4 2.1 2. 8 3.5 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w )
document number: 68790 s09-2109-rev. b, 12-oct-09 www.vishay.com 7 vishay siliconix SI4834CDY channel-1 typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 110 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse
www.vishay.com 8 document number: 68790 s09-2109-rev. b, 12-oct-09 vishay siliconix SI4834CDY channel-2 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10 v thr u 4 v v gs =3 v 0.014 0.016 0.01 8 0.020 0.022 0.024 0 6 12 1 8 24 30 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v v gs =4.5 v 0 2 4 6 8 10 0.0 3.6 7.2 10. 8 14.4 1 8 .0 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =20 v v ds =10 v i d = 8 a v ds =15 v transfer characteristics capacitance on-resistance vs. junction temperature 0 6 12 1 8 24 30 012345 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c 0 240 4 8 0 720 960 1200 0 5 10 15 20 25 30 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss c rss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs =10 v v gs =4.5 v i d = 8 a
document number: 68790 s09-2109-rev. b, 12-oct-09 www.vishay.com 9 vishay siliconix SI4834CDY channel-2 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c - 0. 8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 0.10 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d = 8 a 0 12 24 36 4 8 60 0 1 1 1 0 0 . 00.01 time (s) po w er ( w ) 0.1 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * 1s dc 10 s b v dss limited
www.vishay.com 10 document number: 68790 s09-2109-rev. b, 12-oct-09 vishay siliconix SI4834CDY channel-2 typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 10 0 255075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power derating, junction-to-foot 0.0 0.7 1.4 2.1 2. 8 3.5 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power derating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w )
document number: 68790 s09-2109-rev. b, 12-oct-09 www.vishay.com 11 vishay siliconix SI4834CDY channel-2 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68790 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 110 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
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